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RJU003N03T106 MOSFET Transistor

The RJU003N03T106 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RJU003N03T106 transistor as follows.

Circuit diagram symbol of the RJU003N03T106 transistor

RJU003N03T106 Transistor Specification

Transistor Code RJU003N03T106
Transistor Type MOSFET
Control Channel Type N-Channel
Package UMT3
Transistor SMD Code LP
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 0.3A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.1Ohm
Power Dissipation (Maximum) PD 0.2W
Drain-Source Capacitance 11pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 4nS
Gate-Threshold Voltage (Maximum) 1.5V

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