RJL6018DPK MOSFET Transistor

The RJL6018DPK is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RJL6018DPK transistor as follows.

RJL6018DPK Transistor Specification

Transistor Code		RJL6018DPK
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO3P
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	27A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.265Ohm
Power Dissipation (Maximum)	PD	200W
Drain-Source Capacitance		369pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		53nS
Total Gate Charge		98nC

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