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RJL6012DPE MOSFET Transistor

The RJL6012DPE is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RJL6012DPE transistor as follows.

Circuit diagram symbol of the RJL6012DPE transistor

RJL6012DPE Transistor Specification

Transistor Code RJL6012DPE
Transistor Type MOSFET
Control Channel Type N-Channel
Package LDPAK
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 10A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.1Ohm
Power Dissipation (Maximum) PD 100W
Drain-Source Capacitance 105pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 20nS
Total Gate Charge 28nC

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