RJL6012DPE MOSFET Transistor

The RJL6012DPE is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RJL6012DPE transistor as follows.

RJL6012DPE Transistor Specification

Transistor Code		RJL6012DPE
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		LDPAK
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.1Ohm
Power Dissipation (Maximum)	PD	100W
Drain-Source Capacitance		105pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		20nS
Total Gate Charge		28nC

UXPython is not the creator or an official representative of the RJL6012DPE MOSFET transistor. You can download the official RJL6012DPE MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

2SK3210 MOSFET Transistor 2SK3070L MOSFET Transistor RJK2006DPJ MOSFET Transistor 2SJ551L MOSFET Transistor 2SK1620S MOSFET Transistor 2SK2885 MOSFET Transistor RJK6024DPE MOSFET Transistor RJK1526DPE MOSFET Transistor 2SK3070 MOSFET Transistor 2SJ505S MOSFET Transistor H7N0602LD MOSFET Transistor RJK1536DPE MOSFET Transistor 2SK3161S MOSFET Transistor 2SK3082L MOSFET Transistor 2SK2684S MOSFET Transistor 2SK1315S MOSFET Transistor HAF2011L MOSFET Transistor H7N0608LS MOSFET Transistor 2SK1623S MOSFET Transistor RJL5012DPE MOSFET Transistor