RJK6029DJA MOSFET Transistor

The RJK6029DJA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RJK6029DJA transistor as follows.

RJK6029DJA Transistor Specification

Transistor Code		RJK6029DJA
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO92
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	0.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	16.5Ohm
Power Dissipation (Maximum)	PD	0.75W
Drain-Source Capacitance		8.7pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		15nS

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