RJK6025DPE MOSFET Transistor

The RJK6025DPE is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RJK6025DPE transistor as follows.

RJK6025DPE Transistor Specification

Transistor Code		RJK6025DPE
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		LDPAK
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	0.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	17.5Ohm
Power Dissipation (Maximum)	PD	25W
Drain-Source Capacitance		10.5pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		15nS

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