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RJK6025DPD MOSFET Transistor

The RJK6025DPD is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RJK6025DPD transistor as follows.

Circuit diagram symbol of the RJK6025DPD transistor

RJK6025DPD Transistor Specification

Transistor Code RJK6025DPD
Transistor Type MOSFET
Control Channel Type N-Channel
Package MP3A
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 1A
Drain-Source On-State Resistance (Maximum) RDS(on) 17.5Ohm
Power Dissipation (Maximum) PD 29.7W
Drain-Source Capacitance 7.5pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 14.5nS
Gate-Threshold Voltage (Maximum) 5V

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