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RJK6024DPD MOSFET Transistor

The RJK6024DPD is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RJK6024DPD transistor as follows.

Circuit diagram symbol of the RJK6024DPD transistor

RJK6024DPD Transistor Specification

Transistor Code RJK6024DPD
Transistor Type MOSFET
Control Channel Type N-Channel
Package MP3A
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 0.4A
Drain-Source On-State Resistance (Maximum) RDS(on) 42Ohm
Power Dissipation (Maximum) PD 27.2W
Drain-Source Capacitance 7.5pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 14.5nS

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