RJK6024DPD MOSFET Transistor

The RJK6024DPD is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RJK6024DPD transistor as follows.

RJK6024DPD Transistor Specification

Transistor Code		RJK6024DPD
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		MP3A
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	0.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	42Ohm
Power Dissipation (Maximum)	PD	27.2W
Drain-Source Capacitance		7.5pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		14.5nS

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