RJK6024DP3-A0 MOSFET Transistor

The RJK6024DP3-A0 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RJK6024DP3-A0 transistor as follows.

RJK6024DP3-A0 Transistor Specification

Transistor Code		RJK6024DP3-A0
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT-223
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	0.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	42Ohm
Power Dissipation (Maximum)	PD	1.5W
Drain-Source Capacitance		7.5pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		14.5nS
Total Gate Charge		4.3nC

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