RJK6015DPM MOSFET Transistor

The RJK6015DPM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RJK6015DPM transistor as follows.

RJK6015DPM Transistor Specification

Transistor Code		RJK6015DPM
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO3PFM
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	21A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.36Ohm
Power Dissipation (Maximum)	PD	60W
Drain-Source Capacitance		240pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		45nS
Total Gate Charge		67nC

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