RJK6011DJE MOSFET Transistor

The RJK6011DJE is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RJK6011DJE transistor as follows.

RJK6011DJE Transistor Specification

Transistor Code		RJK6011DJE
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO92MOD
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	0.1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	52Ohm
Power Dissipation (Maximum)	PD	0.9W
Drain-Source Capacitance		4.7pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		16nS

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