RJK6002DPD MOSFET Transistor

The RJK6002DPD is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RJK6002DPD transistor as follows.

RJK6002DPD Transistor Specification

Transistor Code		RJK6002DPD
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		MP3A
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	6.8Ohm
Power Dissipation (Maximum)	PD	30W
Drain-Source Capacitance		20pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		17nS

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