RJK5018DPK MOSFET Transistor

The RJK5018DPK is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RJK5018DPK transistor as follows.

RJK5018DPK Transistor Specification

Transistor Code		RJK5018DPK
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO3P
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	35A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.155Ohm
Power Dissipation (Maximum)	PD	200W
Drain-Source Capacitance		420pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		99nS
Total Gate Charge		104nC

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