RJK5013DPE MOSFET Transistor

The RJK5013DPE is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RJK5013DPE transistor as follows.

RJK5013DPE Transistor Specification

Transistor Code		RJK5013DPE
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		LDPAK
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	14A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.465Ohm
Power Dissipation (Maximum)	PD	100W
Drain-Source Capacitance		155pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		24nS

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