RJK2555DPA MOSFET Transistor

The RJK2555DPA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RJK2555DPA transistor as follows.

RJK2555DPA Transistor Specification

Transistor Code		RJK2555DPA
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		WPAK
Drain-Source Voltage (Maximum)	VDS	250V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	17A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.104Ohm
Power Dissipation (Maximum)	PD	30W
Drain-Source Capacitance		210pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		42nS

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