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RJK2555DPA MOSFET Transistor

The RJK2555DPA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RJK2555DPA transistor as follows.

Circuit diagram symbol of the RJK2555DPA transistor

RJK2555DPA Transistor Specification

Transistor Code RJK2555DPA
Transistor Type MOSFET
Control Channel Type N-Channel
Package WPAK
Drain-Source Voltage (Maximum) VDS 250V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 17A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.104Ohm
Power Dissipation (Maximum) PD 30W
Drain-Source Capacitance 210pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 42nS

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