RJK2055DPA MOSFET Transistor

The RJK2055DPA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RJK2055DPA transistor as follows.

RJK2055DPA Transistor Specification

Transistor Code		RJK2055DPA
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		WPAK
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	20A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.069Ohm
Power Dissipation (Maximum)	PD	30W
Drain-Source Capacitance		245pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		50nS
Total Gate Charge		38nC

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