RJK1209JPE MOSFET Transistor

The RJK1209JPE is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RJK1209JPE transistor as follows.

RJK1209JPE Transistor Specification

Transistor Code		RJK1209JPE
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		LDPAK
Drain-Source Voltage (Maximum)	VDS	120V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	80A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.019Ohm
Power Dissipation (Maximum)	PD	150W
Drain-Source Capacitance		570pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		13nS
Total Gate Charge		65nC

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