RJK1206JPD MOSFET Transistor

The RJK1206JPD is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RJK1206JPD transistor as follows.

RJK1206JPD Transistor Specification

Transistor Code		RJK1206JPD
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK
Drain-Source Voltage (Maximum)	VDS	120V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	30A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.052Ohm
Power Dissipation (Maximum)	PD	50W
Drain-Source Capacitance		230pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		5nS
Total Gate Charge		23nC

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