RJK1053DPB MOSFET Transistor

The RJK1053DPB is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RJK1053DPB transistor as follows.

RJK1053DPB Transistor Specification

Transistor Code		RJK1053DPB
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		LFPAK
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	25A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.013Ohm
Power Dissipation (Maximum)	PD	65W
Drain-Source Capacitance		508pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		5.6nS
Total Gate Charge		43nC

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