RJK1003DPN-E0 MOSFET Transistor

The RJK1003DPN-E0 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RJK1003DPN-E0 transistor as follows.

RJK1003DPN-E0 Transistor Specification

Transistor Code		RJK1003DPN-E0
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220AB
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	50A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.011Ohm
Power Dissipation (Maximum)	PD	125W
Drain-Source Capacitance		660pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		9nS
Total Gate Charge		59nC

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