RJK0852DPB MOSFET Transistor

The RJK0852DPB is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RJK0852DPB transistor as follows.

RJK0852DPB Transistor Specification

Transistor Code		RJK0852DPB
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		LFPAK
Drain-Source Voltage (Maximum)	VDS	80V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	30A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.009Ohm
Power Dissipation (Maximum)	PD	55W
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		28nC

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