RJK03E2DNS MOSFET Transistor

The RJK03E2DNS is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RJK03E2DNS transistor as follows.

RJK03E2DNS Transistor Specification

Transistor Code		RJK03E2DNS
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		HWSON8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	16A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.009Ohm
Power Dissipation (Maximum)	PD	12.5W
Drain-Source Capacitance		157pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		3.9nS

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