RJK03B9DPA MOSFET Transistor

The RJK03B9DPA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RJK03B9DPA transistor as follows.

RJK03B9DPA Transistor Specification

Transistor Code		RJK03B9DPA
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		WPAK
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	30A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0106Ohm
Power Dissipation (Maximum)	PD	25W
Drain-Source Capacitance		160pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		4nS

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