RJK0329DPB MOSFET Transistor

The RJK0329DPB is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RJK0329DPB transistor as follows.

RJK0329DPB Transistor Specification

Transistor Code		RJK0329DPB
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		LFPAK
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	55A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0023Ohm
Power Dissipation (Maximum)	PD	60W
Drain-Source Capacitance		980pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		4nS

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