RJK0323JPD MOSFET Transistor

The RJK0323JPD is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RJK0323JPD transistor as follows.

RJK0323JPD Transistor Specification

Transistor Code		RJK0323JPD
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	30A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.009Ohm
Power Dissipation (Maximum)	PD	40W
Drain-Source Capacitance		470pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		300nS
Total Gate Charge		40nC

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