RJK0230DPA MOSFET Transistor

The RJK0230DPA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RJK0230DPA transistor as follows.

RJK0230DPA Transistor Specification

Transistor Code		RJK0230DPA
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		WPAK
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	20A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0058Ohm
Power Dissipation (Maximum)	PD	15W
Operating Junction Temperature (Maximum)		150°C

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