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RJK0213DPA MOSFET Transistor

The RJK0213DPA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RJK0213DPA transistor as follows.

Circuit diagram symbol of the RJK0213DPA transistor

RJK0213DPA Transistor Specification

Transistor Code RJK0213DPA
Transistor Type MOSFET
Control Channel Type N-Channel
Package WPAK
Drain-Source Voltage (Maximum) VDS 25V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 60A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0023Ohm
Power Dissipation (Maximum) PD 55W
Drain-Source Capacitance 980pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 7.9nS

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