RJK0212DPA MOSFET Transistor

The RJK0212DPA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RJK0212DPA transistor as follows.

RJK0212DPA Transistor Specification

Transistor Code		RJK0212DPA
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		WPAK
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	16V
Drain Current (Maximum)	ID	25A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0108Ohm
Power Dissipation (Maximum)	PD	30W
Drain-Source Capacitance		340pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		2.6nS

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