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RJK0212DPA MOSFET Transistor

The RJK0212DPA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RJK0212DPA transistor as follows.

Circuit diagram symbol of the RJK0212DPA transistor

RJK0212DPA Transistor Specification

Transistor Code RJK0212DPA
Transistor Type MOSFET
Control Channel Type N-Channel
Package WPAK
Drain-Source Voltage (Maximum) VDS 25V
Gate-Source Voltage (Maximum) VGS 16V
Drain Current (Maximum) ID 25A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0108Ohm
Power Dissipation (Maximum) PD 30W
Drain-Source Capacitance 340pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 2.6nS

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