RJK0211DPA MOSFET Transistor

The RJK0211DPA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RJK0211DPA transistor as follows.

RJK0211DPA Transistor Specification

Transistor Code		RJK0211DPA
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		WPAK
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	16V
Drain Current (Maximum)	ID	30A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0082Ohm
Power Dissipation (Maximum)	PD	30W
Drain-Source Capacitance		470pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		2.9nS

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