RJK0208DPA MOSFET Transistor

The RJK0208DPA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RJK0208DPA transistor as follows.

RJK0208DPA Transistor Specification

Transistor Code		RJK0208DPA
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		WPAK
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	65A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.002Ohm
Power Dissipation (Maximum)	PD	60W
Drain-Source Capacitance		1290pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		8nS

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