RJK0206DPA MOSFET Transistor

The RJK0206DPA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RJK0206DPA transistor as follows.

RJK0206DPA Transistor Specification

Transistor Code		RJK0206DPA
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		WPAK
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	70A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0018Ohm
Power Dissipation (Maximum)	PD	65W
Drain-Source Capacitance		1600pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		8.7nS

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