RJJ1011DPD MOSFET Transistor

The RJJ1011DPD is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RJJ1011DPD transistor as follows.

RJJ1011DPD Transistor Specification

Transistor Code		RJJ1011DPD
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		MP3A
Drain-Source Voltage (Maximum)	VDS	100V
Drain Current (Maximum)	ID	6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.26Ohm
Power Dissipation (Maximum)	PD	30W

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