RJJ0601JPN MOSFET Transistor

The RJJ0601JPN is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RJJ0601JPN transistor as follows.

RJJ0601JPN Transistor Specification

Transistor Code		RJJ0601JPN
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-220AB
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	90A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.01Ohm
Power Dissipation (Maximum)	PD	90W
Drain-Source Capacitance		950pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		30nS
Total Gate Charge		150nC

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