RJJ0101DPD MOSFET Transistor

The RJJ0101DPD is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RJJ0101DPD transistor as follows.

RJJ0101DPD Transistor Specification

Transistor Code		RJJ0101DPD
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		MP3A
Drain-Source Voltage (Maximum)	VDS	12V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.07Ohm
Power Dissipation (Maximum)	PD	15W
Drain-Source Capacitance		235pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		150nS

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