RHU002N06FRA MOSFET Transistor

The RHU002N06FRA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RHU002N06FRA transistor as follows.

RHU002N06FRA Transistor Specification

Transistor Code		RHU002N06FRA
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		UMT3
Transistor SMD Code		KP
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	0.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	2.4Ohm
Power Dissipation (Maximum)	PD	0.2W
Drain-Source Capacitance		8pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		5nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		2.2nC

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