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RHP020N06 MOSFET Transistor

The RHP020N06 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RHP020N06 transistor as follows.

Circuit diagram symbol of the RHP020N06 transistor

RHP020N06 Transistor Specification

Transistor Code RHP020N06
Transistor Type MOSFET
Control Channel Type N-Channel
Package MPT3
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 2A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.15Ohm
Power Dissipation (Maximum) PD 0.5W
Drain-Source Capacitance 50pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 10nS

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