RFW2N06RLE MOSFET Transistor

The RFW2N06RLE is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RFW2N06RLE transistor as follows.

RFW2N06RLE Transistor Specification

Transistor Code		RFW2N06RLE
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		HEXDIP
Drain-Source Voltage (Maximum)	VDS	60V
Drain Current (Maximum)	ID	2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.16Ohm
Power Dissipation (Maximum)	PD	1.09W
Operating Junction Temperature (Maximum)		150°C

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