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RFT1P06E MOSFET Transistor

The RFT1P06E is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RFT1P06E transistor as follows.

Circuit diagram symbol of the RFT1P06E transistor

RFT1P06E Transistor Specification

Transistor Code RFT1P06E
Transistor Type MOSFET
Control Channel Type P-Channel
Package SOT223
Drain-Source Voltage (Maximum) VDS 60V
Drain Current (Maximum) ID 1.4A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.285Ohm
Power Dissipation (Maximum) PD 1.1W
Operating Junction Temperature (Maximum) 150°C

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