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RFP8P08 MOSFET Transistor

The RFP8P08 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RFP8P08 transistor as follows.

Circuit diagram symbol of the RFP8P08 transistor

RFP8P08 Transistor Specification

Transistor Code RFP8P08
Transistor Type MOSFET
Control Channel Type P-Channel
Package TO-220AB
Drain-Source Voltage (Maximum) VDS 80V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 8A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.4Ohm
Power Dissipation (Maximum) PD 75W
Drain-Source Capacitance 700pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 70nS
Gate-Threshold Voltage (Maximum) 4V

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