RFP5P12 MOSFET Transistor

The RFP5P12 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RFP5P12 transistor as follows.

RFP5P12 Transistor Specification

Transistor Code		RFP5P12
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-220AB
Drain-Source Voltage (Maximum)	VDS	120V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1Ohm
Power Dissipation (Maximum)	PD	60W
Drain-Source Capacitance		300pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		36nS
Gate-Threshold Voltage (Maximum)		4V

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