RFP30P06 MOSFET Transistor

The RFP30P06 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RFP30P06 transistor as follows.

RFP30P06 Transistor Specification

Transistor Code		RFP30P06
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO220AB
Drain-Source Voltage (Maximum)	VDS	60V
Drain Current (Maximum)	ID	30A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.065Ohm
Power Dissipation (Maximum)	PD	135W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		4V

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