RFP25N06 MOSFET Transistor

The RFP25N06 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RFP25N06 transistor as follows.

RFP25N06 Transistor Specification

Transistor Code		RFP25N06
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220AB
Drain-Source Voltage (Maximum)	VDS	60V
Drain Current (Maximum)	ID	25A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.047Ohm
Power Dissipation (Maximum)	PD	72W
Operating Junction Temperature (Maximum)		150°C

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