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RFM8P10 MOSFET Transistor

The RFM8P10 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RFM8P10 transistor as follows.

Circuit diagram symbol of the RFM8P10 transistor

RFM8P10 Transistor Specification

Transistor Code RFM8P10
Transistor Type MOSFET
Control Channel Type P-Channel
Package TO-204AA
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 8A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.4Ohm
Power Dissipation (Maximum) PD 100W
Drain-Source Capacitance 700pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 70nS
Gate-Threshold Voltage (Maximum) 4V

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