RFM25N06 MOSFET Transistor

The RFM25N06 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RFM25N06 transistor as follows.

RFM25N06 Transistor Specification

Transistor Code		RFM25N06
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-204AA
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	25A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.07Ohm
Power Dissipation (Maximum)	PD	100W
Drain-Source Capacitance		900pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		120nS
Gate-Threshold Voltage (Maximum)		4V

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