RFM12N08 MOSFET Transistor

The RFM12N08 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RFM12N08 transistor as follows.

RFM12N08 Transistor Specification

Transistor Code		RFM12N08
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-204AA
Drain-Source Voltage (Maximum)	VDS	80V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	12A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.2Ohm
Power Dissipation (Maximum)	PD	75W
Drain-Source Capacitance		300pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		250nS
Gate-Threshold Voltage (Maximum)		4V

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