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RFL2N06 MOSFET Transistor

The RFL2N06 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RFL2N06 transistor as follows.

Circuit diagram symbol of the RFL2N06 transistor

RFL2N06 Transistor Specification

Transistor Code RFL2N06
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO205AF
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 2A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.95Ohm
Power Dissipation (Maximum) PD 8.33W
Drain-Source Capacitance 85pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 14nS

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