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RFL1N20 MOSFET Transistor

The RFL1N20 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RFL1N20 transistor as follows.

Circuit diagram symbol of the RFL1N20 transistor

RFL1N20 Transistor Specification

Transistor Code RFL1N20
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO205AF
Drain-Source Voltage (Maximum) VDS 200V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 1A
Drain-Source On-State Resistance (Maximum) RDS(on) 3.65Ohm
Power Dissipation (Maximum) PD 8.33W
Drain-Source Capacitance 60pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 20nS

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