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RFH25N20 MOSFET Transistor

The RFH25N20 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RFH25N20 transistor as follows.

Circuit diagram symbol of the RFH25N20 transistor

RFH25N20 Transistor Specification

Transistor Code RFH25N20
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-218AC
Drain-Source Voltage (Maximum) VDS 200V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 25A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.15Ohm
Power Dissipation (Maximum) PD 150W
Drain-Source Capacitance 900pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 150nS
Gate-Threshold Voltage (Maximum) 4V

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