RFD8P06ESM MOSFET Transistor

The RFD8P06ESM is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RFD8P06ESM transistor as follows.

RFD8P06ESM Transistor Specification

Transistor Code		RFD8P06ESM
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO252AA
Drain-Source Voltage (Maximum)	VDS	60V
Drain Current (Maximum)	ID	8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.3Ohm
Power Dissipation (Maximum)	PD	48W
Operating Junction Temperature (Maximum)		150°C

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