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RFD3N08LSM MOSFET Transistor

The RFD3N08LSM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RFD3N08LSM transistor as follows.

Circuit diagram symbol of the RFD3N08LSM transistor

RFD3N08LSM Transistor Specification

Transistor Code RFD3N08LSM
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO252AA
Drain-Source Voltage (Maximum) VDS 80V
Drain Current (Maximum) ID 3A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.8Ohm
Power Dissipation (Maximum) PD 30W
Operating Junction Temperature (Maximum) 150°C

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