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RFD16N06LE MOSFET Transistor

The RFD16N06LE is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RFD16N06LE transistor as follows.

Circuit diagram symbol of the RFD16N06LE transistor

RFD16N06LE Transistor Specification

Transistor Code RFD16N06LE
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO251AA
Drain-Source Voltage (Maximum) VDS 60V
Drain Current (Maximum) ID 16A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.047Ohm
Power Dissipation (Maximum) PD 90W
Operating Junction Temperature (Maximum) 150°C

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